2SA1734 - Silicon PNP Triple Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SA1734
Manufacturer	Toshiba
File Size	172.83 KB
Description	Silicon PNP Triple Epitaxial Type Transistor
Datasheet	2SA1734 Datasheet

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TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4539 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg −40 −30 −6 −1.2 −0.3 500 1000 150 −55 to 150 V V V A A mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.