2SA1887
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
High-Current Switching Applications
Unit: mm
- Low collector saturation voltage: VCE (sat) =
- 0.4 V (max) at IC =
- 5 A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
Tj Tstg
- 80
- 50
- 7
- 10 -1 2.0 25 150
- 55 to 150
V V V A A
°C °C
JEDEC JEITA
― SC-67
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the...
