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2SA1887 - Silicon PNP Epitaxial Type Transistor

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Datasheet Details

Part number 2SA1887
Manufacturer Toshiba
File Size 152.19 KB
Description Silicon PNP Epitaxial Type Transistor
Datasheet download datasheet 2SA1887 Datasheet

Full PDF Text Transcription for 2SA1887 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SA1887. For precise diagrams, and layout, please refer to the original PDF.

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications 2SA1887 Unit: mm • Low collector saturation voltage: VCE (sat) = −...

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ons 2SA1887 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −80 −50 −7 −10 -1 2.0 25 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― SC-67 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10R1A temperature/current/voltage and the significant change in temperatur