2SA1905
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
High-Current Switching Applications.
Unit: mm
- Low collector saturation voltage: VCE (sat) =
- 0.4 V (max)
- High speed switching time: tstg = 1.0 μs (typ.)
- plementary to 2SC5076
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 60 V
Collector-emitter voltage
VCEO
- 50 V
Emitter-base voltage
VEBO
- 5 V
Collector current
- 5 A
Base current
- 1 A
Collector power dissipation
PC 1.3 W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEITA TOSHIBA
― 2-8M1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
Weight: 0.55 g (typ.) operating temperature/current/voltage, etc.) are within the...
