2SA1905 Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) High speed switching time:.
| Part number | 2SA1905 |
|---|---|
| Datasheet | 2SA1905_ToshibaSemiconductor.pdf |
| File Size | 144.10 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Epitaxial Type Transistor |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) High speed switching time:.
| Part Number | Description |
|---|---|
| 2SA1923 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR |
| 2SA1924 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR |
| 2SA1925 | TRANSISTOR |
| 2SA1926 | Silicon PNP Epitaxial Type Transistor |
| 2SA1930 | PNP Transistor |
| 2SA1932 | Silicon PNP Transistor |
| 2SA1933 | Silicon PNP Epitaxial Type Transistor |
| 2SA1934 | Silicon PNP Epitaxial Type Transistor |
| 2SA1937 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR |
| 2SA1939 | Silicon PNP Transistor |