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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1905
High-Current Switching Applications.
2SA1905
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5076
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −60 V
Collector-emitter voltage
VCEO −50 V
Emitter-base voltage
VEBO −5 V
Collector current
IC −5 A
Base current
IB −1 A
Collector power dissipation
PC 1.3 W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g.
2SA1905 Datasheet
