2SA1954
2SA1954 is Silicon PNP Epitaxial Type Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
General Purpose Amplifier Applications Switching and Muting Switch Application
Unit: mm
- Low saturation voltage: VCE (sat) (1) =
- 15 m V (typ.) @IC =
- 10 m A/IB =
- 0.5 m A
- Large collector current: IC =
- 500 m A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 15 V
Collector-emitter voltage
VCEO
- 12 V
Emitter-base voltage
VEBO
- 5 V
Collector current
- 500 m A
Base current
- 50 m A
Collector power dissipation Junction temperature Storage temperature range
PC 100 m W
Tj 125 °C
Tstg
- 55~125
°C
JEDEC JEITA
― SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in...
