2SA1954 - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SA1954
Manufacturer	Toshiba
File Size	222.92 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1954 Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application 2SA1954 Unit: mm • Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA • Large collector current: IC = −500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −12 V Emitter-base voltage VEBO −5 V Collector current IC −500 mA Base current IB −50 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― SC-70 Note: Using continuously under heavy loads (e.g.