The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SA2058
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2058
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
• • • High DC current gain: hFE = 200 to 500 (IC = −0.2 A) Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating −20 −10 −7 −1.5 −2.5 −150 500 750 150 −55 to 150 Unit V V V A mA mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-3S1A
Weight: 0.01 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.
2SA2058 Datasheet
