2SA512 - Silicon PNP Transistor

Toshiba

Download the 2SA512 datasheet PDF. This datasheet also covers the 2SA510 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

High Breakdown Voltage : VcEO=-100V : VcEO=-60V.
Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max. ), P c=800mW (Max. ).
Complementary to 2SC510 and 2SC512.

📥 Download Datasheet

2SA512 silicon pnp transistor by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SA510_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SA512
Manufacturer	Toshiba
File Size	125.70 KB
Description	Silicon PNP Transistor
Datasheet	2SA512 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SA500	Silicon PNP Epitaxial Transistor	Toshiba
2SA503	Silicon PNP Transistor	Toshiba
2SA504	Silicon PNP Transistor	Toshiba
2SA505	Silicon PNP Transistor	Toshiba
2SA505	Silicon PNP Power Transistor	Inchange Semiconductor

Other Datasheets by Toshiba

Part Number	Description
2SA510	Silicon PNP Transistor
2SA562TM	Silicon PNP Transistor
2SA1012	TRANSISITOR
2SA1013	Silicon PNP Transistor
2SA1015	Silicon NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

: 2SA510 2SA512, SILICON PIMP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm pa39MAX | 0ft45MAX. f FEATURES • High Breakdown Voltage : VcEO=-100V : VcEO=-60V • Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.) • Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage 2SA510 2SA512 2SA510 2SA512 v CBO v CEO VEBO Collector Current ic Base Current IB Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C ?C T J Storage Temperature Range Tstg RATING UNIT -120 V -80 -100 V -60 -5 V -1.