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2SA510
2SA512,
SILICON PIMP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
pa39MAX
|
0ft45MAX.
f
FEATURES
• High Breakdown Voltage : VcEO=-100V : VcEO=-60V
• Various Uses for Medium Power
(2S^,510) (2S/i512)
zz
pa45
I
1
M os
Oi
: I C=-1.5A (Max.), P c=800mW (Max.)
• Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector- Emitter Voltage Emitter-Base Voltage
2SA510 2SA512 2SA510 2SA512
v CBO v CEO VEBO
Collector Current
ic
Base Current
IB
Collector Power Dissipation
Junction Temperature
Ta=25°C Tc=25°C ?C
T
J
Storage Temperature Range
Tstg
RATING UNIT
-120
V
-80
-100 V
-60
-5
V
-1.
2SA512 Datasheet
