2SA970
2SA970 is Silicon PNP Epitaxial Type Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Low Noise Audio Amplifier Applications
- Low noise :NF = 3d B (typ.) RG = 100 Ω, VCE =
- 6 V, IC =
- 100 μA, f = 1 k Hz
: NF = 0.5d B (typ.) RG = 1 kΩ, VCE =
- 6 V, IC =
- 100 μA, f = 1 k Hz
- High DC current gain: h FE = 200~700
- High breakdown voltage: VCEO =
- 120 V
- Low pulse noise. Low 1/f noise
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
- 120
- 120
- 5
- 100
- 20 300 125
- 55~125
V V V m A m A m W °C °C
JEDEC JEITA
TO-92 SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.21 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Noise...
