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SILICON NPN EPITAXIAL PLANAR TYPE
2SC1169
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =2.5W (Min.)
( f=175MHz, VCC=13.5V, Pi=0.25W )
09.39MAX. 6.5MAX
.
Unit in mm
rTTTT pa 45
THT-
n
2 6 MAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO v CEO 'EBO ic
stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
RATING 40 20
10 175
-65-175
UNIT
1. EMITTER fCASE) 2. BASE 3. COLLECTOR
°C TOSHIBA
2— 9A1B
Weight : 3.
2SC1169 Datasheet
