2SC2500
.Data Sheet.co.kr
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Strobe Flash Applications Medium-Power Amplifier Applications
Unit: mm
- High DC current gain and excellent h FE linearity : h FE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : h FE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)
- Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 30 30 10 6 2 5 0.5 900 150
- 55 to 150 A Unit V V V
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
A m W °C °C
Weight: 0.36 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage...
