2SC3334 Overview
Key Features
- High breakdown voltage: VCEO = 250 V
- Low Cre: 1.8 pF (max)
| Part | 2SC3334 |
|---|---|
| Description | Silicon NPN Triple Diffused TRANSISTOR |
| Category | Transistor |
| Manufacturer | Toshiba |
| Size | 122.14 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC3331 | SANYO | Epitaxial Planar Silicon Transistor |
| C3333 | Toshiba | 2SC3333 |
| 2SC3336 | Hitachi Semiconductor | Silicon NPN Transistor |
| 2SC3330 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| C3332 | SANYO | 2SC3332 |