2SC3606 - Silicon NPN Transistor

Toshiba

Datasheet Details

Part number	2SC3606
Manufacturer	Toshiba
File Size	235.97 KB
Description	Silicon NPN Transistor
Datasheet	2SC3606 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SC3605	Silicon NPN Epitaxial Planar Type Transistor
2SC3607	Silicon NPN Transistor
2SC3613	NPN Transistor
2SC3619	NPN Transistor
2SC3620	Silicon NPN Transistor

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 2SC3606 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 80 40 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.