2SC3710A - Silicon NPN Transistor

Toshiba Semiconductor

Datasheet Details

Part number	2SC3710A
Manufacturer	Toshiba Semiconductor
File Size	170.23 KB
Description	Silicon NPN Transistor
Datasheet	2SC3710A Datasheet
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www.DataSheet4U.com 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switching Applications Unit: mm • • • Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1452A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 6 12 2 30 150 Unit V V V A A W JEDEC °C °C ― ― 2-10R1A DataSheet4U.

Published: Jul 19, 2006 |