2SC4317
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
- Low noise figure, high gain.
- NF = 1.1d B, |S21e|2 = 13d B (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IB IC PC Tj Tstg
Rating
20 10 1.5 20 40 150 125 -55~125
Unit
V V V m A m A m W °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition f T ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 m A VCE = 8 V, IC = 20 m A, f = 1 GHz VCE = 8 V, IC = 20 m A, f = 2 GHz VCE = 8 V, IC = 5 m A, f = 1 GHz VCE = 8 V, IC = 5 m A, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz 10 13 ¾ d B ¾7¾ ¾ 1.1 2.5 d B ¾ 1.7 ¾
Electrical...
