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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications Power switching applications
2SC4409
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.) • Small flat package
• PC = 1~2 W (Mounted on a ceramic substrate) • Complementary to 2SA1681
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 6 V
Collector current
IC 2 A
Base current
IB 0.
2SC4409 Datasheet
