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2SC4497
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC4497
High Voltage Control Applications
Unit: mm
• High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.) • Complementary to 2SA1721
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
300
V
300
V
6
V
100
mA
20
mA
200
mW
150
°C
−55 to 150
°C
JEDEC JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.g.
2SC4497 Datasheet
