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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4681
Strobe Flash Applications Medium Power Amplifier Applications
2SC4681
Unit: mm
· Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
· Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA)
· Complementary to 2SA1802
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse (Note)
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB
PC
Tj Tstg
30 30 10 6 3
6
0.5 1.
2SC4681 Datasheet
