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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4684
Strobe Flash Applications Medium Power Amplifier Applications
2SC4684
Unit: mm
• High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)
• Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA)
• High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
(Note)
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB
PC
Tj Tstg
50 40 20 8 5
8
0.5 1.
2SC4684 Datasheet
