2SC4690 - NPN TRANSISTOR

Toshiba Semiconductor

Datasheet Details

Part number	2SC4690
Manufacturer	Toshiba Semiconductor
File Size	118.24 KB
Description	NPN TRANSISTOR
Datasheet	2SC4690 Datasheet
Additional preview pages of the 2SC4690 datasheet.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications 2SC4690 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1805 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current DC IC 10 A Pulse ICP 20 Base current IB 1 A Collector power dissipation (Tc = 25°C) PC 80 W JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-16F1A Weight: 5.8 g (typ.) Note: Using continuously under heavy loads (e.g.

Published: Apr 3, 2005 |