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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4881
High-Current Switching Applications
2SC4881
Unit: mm
• Low saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 0.8 μs (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
DC
IC
5 A
Pulse ICP 8
Base current
IB 1 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
20
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.
2SC4881 Datasheet
