2SC4935
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Power Amplifier Applications
Unit: mm
- Good h FE linearity
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage Collector current Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VEBO IC IB
5V 3A 0.3 A 2
W 10
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-67 temperature/current/voltage and the significant change in
TOSHIBA
2-10R1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba...
