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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applications
2SC5000
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 10 A
Base current
IB 1 A
Collector power dissipation
PC 25 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.
2SC5000 Datasheet
