2SC5064 Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications - Low noise figure, high gain. - NF = 1.1d B, |S21e|2 = 12d B (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 15 m A 30 m A 150 m W °C - 55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition f T ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 5 V, IC = 10 m A VCE = 5 V, IC = 10 m A, f = 500 MHz VCE = 5 V, IC = 10 m A, f = 1 GHz VCE = 5 V, IC = 3 m A, f = 500 MHz VCE = 5 V, IC = 3 m A, f = 1 GHz Min Typ. Max...