2SC5075
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications
Industrial Applications Unit: mm
- High-speed switching: tr = 1.0 μs (max), tf = 1.0 μs (max)
- High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 500 V
Collector-emitter voltage
VCEO 400 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 2 A
Base current
IB 0.5 A
Collector power dissipation Junction temperature
PC 1.3 W
Tj
150 °C
JEDEC
―
Storage temperature range
Tstg
- 55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-8M1A temperature/current/voltage and the significant change in
Weight: 0.55 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating...
