2SC5089
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
VHF~UHF Band Low Noise Amplifier Applications
- Low noise figure, high gain.
- NF = 1.1d B, |S21e|2 = 13d B (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 10 V
Emitter-base voltage
VEBO 1.5 V
Base current
IB 20 m A
Collector current
IC 40 m A
Collector power dissipation
PC 150 m W
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
- 55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability...
