2SC5122
2SC5122 is NPN TRANSISTOR manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Triple Diffused Type
High-Voltage switching Applications
Unit: mm
- High breakdown voltage: VCEO = 400 V
- Low saturation voltage: VCE (sat) = 0.4 V (typ.)
(IC = 20 m A, IB = 0.5 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 400 V
Collector-emitter voltage
VCEO 400 V
Emitter-base voltage
VEBO 7 V
Collector current
DC Pulse
50 m A
ICP 100
Base current
IB 25 m A
Collector power dissipation
900 m W
JEDEC
TO-92MOD
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
JEITA TOSHIBA
― 2-5J1A
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate,...
