2SC5254
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
- Low noise figure: NF = 1.5d B (f = 2 GHz)
- High gain: Gain = 8.5d B (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
15 7 1.5 40 20 150 125 -55~125
Unit
V V V m A m A m W °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition f T ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 1 GHz VCE = 5 V, IC = 20 m A, f = 2 GHz VCE = 5 V, IC = 5 m A, f = 1 GHz VCE = 5 V, IC = 5 m A, f = 2 GHz
Min Typ. Max Unit
9 12 ¾ GHz
11.5 5.5
14.5 8.5
¾ ¾ d B
¾ 1.1 ¾ d B
¾...
