2SC5319 - NPN TRANSISTOR

Toshiba

Key Features

any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by.

2SC5319 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC5319
Manufacturer	Toshiba
File Size	232.98 KB
Description	NPN TRANSISTOR
Datasheet	2SC5319 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC5310	NPN TRANSISTOR	Sanyo Semicon Device
2SC5310	NPN Epitaxial Planar Silicon Transistors	Kexin
2SC5300	NPN TRANSISTOR	Sanyo Semicon Device
2SC5301	NPN TRANSISTOR	Sanyo Semicon Device
2SC5302	NPN TRANSISTOR	Sanyo Semicon Device

Other Datasheets by Toshiba

Part Number	Description
2SC5315	NPN TRANSISTOR
2SC5316	NPN TRANSISTOR
2SC5317	NPN TRANSISTOR
2SC5317FT	NPN TRANSISTOR
2SC5318	NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB (f = 2 GHz) • High gain: ⎪S21e⎪2 = 11.5dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collector current IC 20 mA Base current IB 10 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C １，３ EMITTER Storage temperature range Tstg −55 to 125 °C ２ COLLECTOR ４ BASE Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.