2SC5322FT - NPN TRANSISTOR

Toshiba Semiconductor

Datasheet Details

Part number	2SC5322FT
Manufacturer	Toshiba Semiconductor
File Size	122.79 KB
Description	NPN TRANSISTOR
Datasheet	2SC5322FT Datasheet
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT 2SC5322FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure: NF = 1.4dB (f = 2 GHz) • High gain: |S21e|2 = 10dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 5 1.5 10 5 100 125 −55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.

Published: Apr 3, 2005 |