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2SC5353
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5353
Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications
Unit: mm
• •
Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 900 800 7 3 5 1 2.0 25 150
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Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
−55 to 150
Weight: 1.7 g (typ.
2SC5353 Datasheet
