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2SC5355
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5355
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
• • • Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 5 7 1 1.5 25 150 −55~150 Unit V V V A A
JEDEC
W °C °C
― ― 2-7B5A
JEITA TOSHIBA
Weight: 0.36 g (typ.)
JEDEC JEITA TOSHIBA
― ― 2-7B7A
Weight: 0.
2SC5355 Datasheet
