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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5358
Power Amplifier Applications
2SC5358
Unit: mm
• High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC
150
W
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-16C1A
Note: Using continuously under heavy loads (e.g.
2SC5358 Datasheet
