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2SC5368
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5368
High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
Unit: mm
• • •
High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) High breakdown voltage: VCEO = 450 V High DC current gain: hFE = 20 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 650 450 7 2 4 0.5 1.5 10 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-8H1A
Weight: 0.82 g (typ.