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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376
Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
2SC5376
Unit: mm
• Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA
• High collector current: IC = 400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 15 V
Collector-emitter voltage
VCEO 12 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 400 mA
Base current
IB 50 mA
Collector power dissipation Junction temperature Storage temperature range
PC 100 mW
Tj 125 °C
Tstg
−55 to 125
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g.
2SC5376 Datasheet
