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2SC5713
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5713
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
• • • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf = 50 ns (typ.) Industrial Applications Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 15 10 7 4 7 400 1.0 2.5 150 −55 to 150 Unit V V V V A mA W °C °C
JEDEC JEITA TOSHIBA
― SC-62 2-5K1A
Weight: 0.
2SC5713 Datasheet
