2SC5857 - SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

Toshiba

Datasheet Details

Part number	2SC5857
Manufacturer	Toshiba
File Size	229.93 KB
Description	SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Datasheet	2SC5857 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC5850	Silicon NPN Epitaxial Type Transistor	Renesas Technology
2SC5851	Silicon NPN Epitaxial Type Transistor	Renesas Technology
2SC5852	Silicon NPN epitaxial planar type Transistor	Renesas Technology
2SC5855	Silicon NPN Transistor	Toshiba
2SC5855	NPN Transistor	INCHANGE

Other Datasheets by Toshiba

Part Number	Description
2SC5856	SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
2SC5858	SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
2SC5810	NPN Transistor
2SC5819	NPN Transistor
2SC5886	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com 2SC5857 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5857 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Voltage Low Saturation Voltage High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (max) : tf(2) = 0.1 µs (typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 750 5 21 42 10.