2SC5930 - Silicon NPN Triple Diffused Type Transistor

Toshiba

Datasheet Details

Part number	2SC5930
Manufacturer	Toshiba
File Size	174.92 KB
Description	Silicon NPN Triple Diffused Type Transistor
Datasheet	2SC5930 Datasheet

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2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.3 μs (max) (IC = 0.3 A) Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 600 285 7 1.0 2.0 0.5 1.0 150 −55 to 150 Unit V V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Weight: 0.2 g (typ.) Note: Using continuously under heavy loads (e.g.