2SC6087
TOSHIBA Transistor Silicon NPN Epitaxial Type
Power Amplifier Applications Power Switching Applications
Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 7 2.5 5.0 1.0 1.3 150
- 55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR 3 : EMITTER
JEDEC JEITA TOSHIBA Weight:0.55g(typ)
― ― 2-8M1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)...
