2SC752TM
2SC752(G)TM
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC752(G)TM
Ultra High Speed Switching Applications puter, Counter Applications
Unit: mm
- High transition frequency: f T = 400 MHz (typ.)
- Low saturation voltage: VCE (sat) = 0.3 V (max)
- High speed switching time: tstg = 15 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
40 15 5 200 40 400 125 -55~125
Unit
V V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 5 V, IC = 0 h FE (1) VCE = 1 V, IC = 10 m...
