2SD1525
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
High Current Switching Applications
Unit: mm
- High collector current: IC = 30 A
- High DC current gain: h FE = 1000 (min) (VCE = 5 V, IC = 20 A)
- Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
Tj Tstg
Rating 100 100 5 30 5
- 55 to 150
Unit V V V A A
°C °C
Equivalent Circuit
COLLECTOR
BASE
≈ 2 kΩ
≈ 100 Ω
EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
1 2003-02-04
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage...
