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2SD1525
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD1525
High Current Switching Applications
Unit: mm
· High collector current: IC = 30 A · High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) · Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 100 100 5 30 5
150
150 −55 to 150
Unit V V V A A
W
°C °C
Equivalent Circuit
COLLECTOR
BASE
≈ 2 kΩ
≈ 100 Ω
EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.
2SD1525 Datasheet
