Datasheet Summary
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
Motor Drive Applications High-Current Switching Applications
Unit: mm
- High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A)
- High breakdown voltage: VCEO (SUS) = 200 V (min)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
Tj Tstg
Rating
300 200
6 ±12 ±18
1 2.0 30 150
- 55 to 150
Unit V V V
°C °C
Equivalent...
