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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
2SD2414(SM)
High Current Switching Applications Power Amplifier Applications
Unit: mm
· Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
100 80 5 7 1 1.5 40 150 −55 to 150
Unit V V V A A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10S2
Weight: 1.4 g (typ.
2SD2414 Datasheet
