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2SD2526
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2526
High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
· High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) · Complementary to 2SB1641
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC
IB PC Tj Tstg
Rating
100 100
7 5 8 0.5 1.8 150 −55 to 150
Unit V V V
A
A W °C °C
Equivalent Circuit
BASE
COLLECTOR
≈ 5 kΩ
≈ 150 Ω EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.
2SD2526 Datasheet
