• Part: 2SD777
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 224.25 KB
Download 2SD777 Datasheet PDF
Toshiba
2SD777
FEATURES : . Excellent Vide Safe Operating Area (100 W-S at Tc=25°C). . Included Abalanche Diode. : Vz=55±10V . High D.C Current Gain. : h FE >500 . High Collector Power Dissipation Capability : 100 V at 25°C Case Temperature. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current (Continuous ic ) Collector Current (Peak) L CP Collector Power Dissipation PC (Tc=25°C) Junction Temperature Storage Temperature Range rstg EQUIVALENT CIRCUIT COLLECTOR <> 1 2Q xs -AVI RATING 55+10 55±10 UNIT 20 100 150 -65-150 -o EMITTER Unit in mm >T~ 025.OMAX. 1. BASE 2. EMITTER COLLECTOR (CASE) JEDEC TO- TOSHIBA 2- 2 1A1A Mounting kit No. AC73 Weight :12.0g Vz=55±10V 6 BASE ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Base Breakdown Voltage v (BR)CBO I C =10m A,...