. Excellent Vide Safe Operating Area (100 W-S at Tc=25°C). . Included Abalanche Diode. : Vz=55±10V
. High D. C Current Gain. : hFE >500
. High Collector Power Dissipation Capability : 100 V at 25°C Case Temperature.
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SILICON NPN DOUBLE DIFFUSED TYPE
(PCT PROCESS)
POWER REGULATOR FOR LINE OPERATED TV APPLICATIONS. FEATURES:
. Excellent Vide Safe Operating Area (100 W-S at Tc=25°C).
. Included Abalanche Diode. : Vz=55±10V
. High D.C Current Gain. : hFE >500
. High Collector Power Dissipation Capability : 100 V at 25°C Case Temperature.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage
SYMBOL VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (Continuous ic )
Collector Current (Peak)
L CP
Collector Power Dissipation PC
(Tc=25°C)
Junction Temperature
Storage Temperature Range
rstg
EQUIVALENT CIRCUIT COLLECTOR <>
1 2Q
xs -AVI
RATING 55+10 55±10
UNIT
20 100 150 -65-150
-o EMITTER
Unit in mm >T~
025.OMAX.
1. BASE 2.
2SD777 Datasheet
