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2SD777 - Silicon NPN Transistor

Datasheet Summary

Features

  • . Excellent Vide Safe Operating Area (100 W-S at Tc=25°C). . Included Abalanche Diode. : Vz=55±10V . High D. C Current Gain. : hFE >500 . High Collector Power Dissipation Capability : 100 V at 25°C Case Temperature.

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Datasheet Details

Part number 2SD777
Manufacturer Toshiba Semiconductor
File Size 224.25 KB
Description Silicon NPN Transistor
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Full PDF Text Transcription

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SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) POWER REGULATOR FOR LINE OPERATED TV APPLICATIONS. FEATURES: . Excellent Vide Safe Operating Area (100 W-S at Tc=25°C). . Included Abalanche Diode. : Vz=55±10V . High D.C Current Gain. : hFE >500 . High Collector Power Dissipation Capability : 100 V at 25°C Case Temperature. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current (Continuous ic ) Collector Current (Peak) L CP Collector Power Dissipation PC (Tc=25°C) Junction Temperature Storage Temperature Range rstg EQUIVALENT CIRCUIT COLLECTOR <> 1 2Q xs -AVI RATING 55+10 55±10 UNIT 20 100 150 -65-150 -o EMITTER Unit in mm >T~ 025.OMAX. 1. BASE 2.
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