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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ305
High Speed Switching Applications Analog Applications
• High input impedance • Low gate threshold voltage.: Vth = −0.5 to −1.5 V • Excellent switching times.: ton = 0.06 μs (typ.)
toff = 0.15 μs (typ.) • Low drain-source ON resistance: RDS (ON) = 2.4 Ω (typ.) • Small package. • Complementary to 2SK2009
2SJ305
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
VDS VGSS
ID PD Tch Tstg
−30
V
±20
V
−200
mA
200
mW
150
°C
−55 to 150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g.
2SJ305 Datasheet
