2SJ346
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
High Speed Switching Applications Analog Switch Applications
- Low threshold voltage: Vth =
- 0.5~- 1.5 V
- High speed
- Small package
- plementary to 2SK1829
Marking
Equivalent Circuit
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
Rating
-20 -7 -50 100 150 -55~150
Unit
V V m A m W °C °C
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gateate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshould voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance
Switching time
Turn-on time Turn-off time
Symbol
Test Condition
IGSS V (BR) DSS
IDSS Vth ïYfsï RDS (ON) Ciss Crss...
