2SJ380 Datasheet | Toshiba

Key Features

• 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) Enhancement mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm