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2SJ380
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ380
Relay Drive, DC-DC Converter and Motor Drive Applications
• • • • • 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) Enhancement mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −100 −100 ±20 −12 −48 35 312 −12 3.
2SJ380 Datasheet
