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2SJ537
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI)
2SJ537
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance
: RDS (ON) = 0.16 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
z Low leakage current : IDSS = −100 μA (VDS = −50 V)
z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
−50 −50 ±20 −5 −15 0.
2SJ537 Datasheet
