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2SJ567
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC/DC Converter and Motor Drive Applications
6.5 ± 0.2 5.2 ± 0.2
Unit: mm
0.6 MAX.
1.5 ± 0.2
• Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) • Enhancement model: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1.2 MAX.
0.8 MAX. 0.6 ± 0.15
1
1.05 MAX. 23
1.1 ± 0.2 0.6 MAX.
5.5 ± 0.2 9.5 ± 0.3
2.3 ± 0.2 0.1 ± 0.
2SJ567 Datasheet
