Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSII.5)
DC- DC Converter and Motor Drive Applications z Low drain- source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage current
: IDSS = 300 µA (max) (VDS = 800 V) z Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Unit:...