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2SK1310A
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1310A
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
z Output Power
: Po ≥ 190 W (Min.)
z Drain Efficiency
: ηD = 65% (Typ.)
z Frequency
: f = 230 MHz
z Push−Pull Structure Package
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range
VDSS VGSS
ID IDR PD Tch Tstg
100 ±20 12 12 250 150 −55~150
V V A A W °C °C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
—
temperature/current/voltage and the significant change in
EIAJ
—
temperature, etc.
2SK1310A Datasheet
